CARRIER RELAXATION IN AN INP INGAAS NONLINEAR BRAGG REFLECTOR/

Carrier dynamics in absorption saturation in an InP/InGaAs nonlinear B ragg reflector is studied by transient reflectance measurements. An ul trafast process of the relaxation time shorter than 100 fs is observed and identified as carrier-carrier scatttering. Such an ultrafast proc ess is not observed in the transient reflectance of bulk InGaAs measur ed with the same photoexcitation level. The difference between these t ransient reflectance characteristics indicates an enhancement of carri er-carrier scattering in the nonlinear Bragg reflector. (C) 1998 Ameri can Institute of Physics.