OPTICAL MONITORING OF INP MONOLAYER GROWTH-RATES

Reflection anisotropy (RA) spectroscopy has been used to examine the i n vacuo (001) surface of InP before and during growth by molecular bea m epitaxy (MBE). The dominant effect on the RE signal occurring the in itiation of growth is the change in the surface V/III ratio, caused by the exposure of the surface to the incident indium flux. During MBE g rowth of InP under commonly used conditions, RA oscillations are clear ly observed. These oscillations have been confirmed to correspond to t he growth of InP monolayers. The oscillations are tentatively ascribed to the variation in P coverage during the growth of each monolayer of material. (C) 1998 American Institute of Physics.