HETEROEPITAXY OF ZNO ON GAN AND ITS IMPLICATIONS FOR FABRICATION OF HYBRID OPTOELECTRONIC DEVICES

Citation
Rd. Vispute et al., HETEROEPITAXY OF ZNO ON GAN AND ITS IMPLICATIONS FOR FABRICATION OF HYBRID OPTOELECTRONIC DEVICES, Applied physics letters, 73(3), 1998, pp. 348-350
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
73
Issue
3
Year of publication
1998
Pages
348 - 350
Database
ISI
SICI code
0003-6951(1998)73:3<348:HOZOGA>2.0.ZU;2-U
Abstract
ZnO thin films have been grown heteroepitaxially on epi-GaN/sapphire ( 0001) substrates. Rutherford backscattering spectroscopy, ion channeli ng, and high resolution transmission electron microscopy studies revea led high-quality epitaxial growth of ZnO on GaN with an atomically sha rp interface. The x-ray diffraction and ion channeling measurements in dicate near perfect alignment of the ZnO epilayers on GaN as compared to those grown directly on sapphire (0001). Low-temperature cathodolum inescence studies also indicate high optical quality of these films pr esumably due to the close lattice match and stacking order between ZnO and GaN. Lattice-matched epitaxy and good luminescence properties of ZnO/GaN heterostructures are thus promising for ultraviolet lasers. Th ese heterostructures demonstrate the feasibility of integrating hybrid ZnO/GaN optoelectronic devices. (C) 1998 American Institute of Physic s.