Rd. Vispute et al., HETEROEPITAXY OF ZNO ON GAN AND ITS IMPLICATIONS FOR FABRICATION OF HYBRID OPTOELECTRONIC DEVICES, Applied physics letters, 73(3), 1998, pp. 348-350
ZnO thin films have been grown heteroepitaxially on epi-GaN/sapphire (
0001) substrates. Rutherford backscattering spectroscopy, ion channeli
ng, and high resolution transmission electron microscopy studies revea
led high-quality epitaxial growth of ZnO on GaN with an atomically sha
rp interface. The x-ray diffraction and ion channeling measurements in
dicate near perfect alignment of the ZnO epilayers on GaN as compared
to those grown directly on sapphire (0001). Low-temperature cathodolum
inescence studies also indicate high optical quality of these films pr
esumably due to the close lattice match and stacking order between ZnO
and GaN. Lattice-matched epitaxy and good luminescence properties of
ZnO/GaN heterostructures are thus promising for ultraviolet lasers. Th
ese heterostructures demonstrate the feasibility of integrating hybrid
ZnO/GaN optoelectronic devices. (C) 1998 American Institute of Physic
s.