RESISTIVITY ANISOTROPY IN ORDERED INXGA1-XP GROWN AT 640-DEGREES-C

The anisotropy of electrical properties in ordered InxGa1-xP epitaxial layers was studied. These samples were prepared by a low-pressure met alorganic chemical vapor phase epitaxy technique at the growth tempera ture of 640 degrees C. Resistivity measurements using a four-point-pro be method have shown that samples with a low misfit value (0-1.5 x 10( -3)) are electrically uniform. For samples with higher misfit the anis otropy of resistivity markedly increases up to a maximum of 950. Compa ring the results obtained from x-ray diffraction, low temperature phot oluminescence, and atomic force microscopy experiments, pie have shown that lattice mismatch can support the evolution and extension of the ordering effect in the InxGa1-xP layers. (C) 1998 American Institute o f Physics.