SINGLE-CRYSTAL FE FILMS GROWN ON INAS(100) BY MOLECULAR-BEAM EPITAXY

Citation
Yb. Xu et al., SINGLE-CRYSTAL FE FILMS GROWN ON INAS(100) BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 73(3), 1998, pp. 399-401
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
73
Issue
3
Year of publication
1998
Pages
399 - 401
Database
ISI
SICI code
0003-6951(1998)73:3<399:SFFGOI>2.0.ZU;2-5
Abstract
Thin Fe films have been grown on InAs(100) by molecular beam epitaxy, and studied using in situ magneto-optical Kerr effect (MOKE), low ener gy electron diffraction (LEED), and scanning tunneling microscopy (STM ). Despite the large lattice mismatch between Fe and InAs, the growth of Fe on InAs at 175 degrees C was found to be epitaxial with the orie ntation relationship Fe(100)[001]\\InAs(100)[001], as evidenced by LEE D. STM images indicate that growth proceeds via a 3D Volmer-Weber mode . The magnetic hysteresis loops measured using in situ MOKE show a dis tinct cubic anisotropy with the easy axis along [001], the easy axis o f bulk bcc Fe, which further confirms that well ordered single crystal Fe films have been stabilized on the InAs(100) substrate. Current-vol tage measurements in the temperature range of 2.5-304 K show that Fe f orms an ohmic contact on InAs. We propose that Fe/lnAs is a suitable h eterostructure for magnetoelectronic devices as, unlike Fe/GaAs, there is no Schottky barrier to electron transport. (C) 1998 American Insti tute of Physics.