Thin Fe films have been grown on InAs(100) by molecular beam epitaxy,
and studied using in situ magneto-optical Kerr effect (MOKE), low ener
gy electron diffraction (LEED), and scanning tunneling microscopy (STM
). Despite the large lattice mismatch between Fe and InAs, the growth
of Fe on InAs at 175 degrees C was found to be epitaxial with the orie
ntation relationship Fe(100)[001]\\InAs(100)[001], as evidenced by LEE
D. STM images indicate that growth proceeds via a 3D Volmer-Weber mode
. The magnetic hysteresis loops measured using in situ MOKE show a dis
tinct cubic anisotropy with the easy axis along [001], the easy axis o
f bulk bcc Fe, which further confirms that well ordered single crystal
Fe films have been stabilized on the InAs(100) substrate. Current-vol
tage measurements in the temperature range of 2.5-304 K show that Fe f
orms an ohmic contact on InAs. We propose that Fe/lnAs is a suitable h
eterostructure for magnetoelectronic devices as, unlike Fe/GaAs, there
is no Schottky barrier to electron transport. (C) 1998 American Insti
tute of Physics.