FERROELECTRIC PROPERTIES OF C-ORIENTED YMNO3 FILMS DEPOSITED ON SI SUBSTRATES

We have proposed the use of RMnO3 (R: rare earth elements) films for m etal-ferroelectric-semiconductor field effect transistor (MFSFET)-type ferroelectric random access memories (Ferroelectric RAMs). This repor ts the production of YMnO3, films on Si substrates for MFSFET with con firmation of the distinct ferroelectricity by P-E hysteresis and capac itance-voltage (C-V) measurement. (0001)-oriented YMnO3 films were obt ained on a (111)Si substrate using a pulsed-laser deposition method. A lthough the Pt/YMnO3/Si structure exhibits a very small remnant polari zation of 1.2 nC/cm(2), it has clear ferroelectric polarization switch ing type C-V characteristics with a memory window of 1.1 V. The dielec tric constant and the dissipation factor were 27.8 and 0.035, respecti vely. The polarization switching characteristics are discussed, (C) 19 98 American Institute of Physics.