The role of defects as essential entities in semiconductor materials i
s reviewed. Early experiments with semiconductors were hampered by the
extreme sensitivity of the, electronic properties to minute concentra
tions of impurities. Semiconductors were viewed as a family of solids
with irreproducible properties. Scientific efforts overcame this idios
yncrasy and turned the art of impurity doping into today's exceedingly
useful and reproducible technology that is used to control precisely
electrical conductivity, composition, and minority carrier lifetimes o
ver wide ranges. Native defects such as vacancies and self-interstitia
ls control basic processes, foremost self- and dopant diffusion. The s
tructural properties of dislocations and higher dimensional defects ha
ve been studied with atomic resolution, but a thorough theoretical und
erstanding of their electronic properties is incomplete. Reactions bet
ween defects within the host Lattices are increasingly better understo
od and are used for gettering and electrical passivation of unwanted i
mpurities. Metastable defects such as DX centers and the EL2-related a
rsenic antisite are briefly discussed. The recent development of isoto
pically controlled semiconductors has created new research opportuniti
es in this field.