IMPERFECT ORIENTED ATTACHMENT - DISLOCATION GENERATION IN DEFECT-FREENANOCRYSTALS

Citation
Rl. Penn et Jf. Banfield, IMPERFECT ORIENTED ATTACHMENT - DISLOCATION GENERATION IN DEFECT-FREENANOCRYSTALS, Science, 281(5379), 1998, pp. 969-971
Citations number
25
Categorie Soggetti
Multidisciplinary Sciences
Journal title
ISSN journal
00368075
Volume
281
Issue
5379
Year of publication
1998
Pages
969 - 971
Database
ISI
SICI code
0036-8075(1998)281:5379<969:IOA-DG>2.0.ZU;2-5
Abstract
Dislocations are common defects in solids, yet all crystals begin as d islocation-free nuclei. The mechanisms by which dislocations form duri ng early growth are poorly understood. When nanocrystalline materials grow by oriented attachment at crystallographically specific surfaces and there is a small misorientation at the interface, dislocations res ult. Spiral growth at two or more closely spaced screw dislocations pr ovides a mechanism for generating complex polytypic and polymorphic st ructures. These results are of fundamental importance to understanding crystal growth.