MEASURED RESULTS ON BANDGAP REFERENCE IN SIGE BICMOS

Authors
AINSPAN HA WEBSTER CS
Citation
Ha. Ainspan et Cs. Webster, MEASURED RESULTS ON BANDGAP REFERENCE IN SIGE BICMOS, Electronics Letters, 34(15), 1998, pp. 1441-1442
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
15
Year of publication
1998
Pages
1441 - 1442
Database
ISI
SICI code
0013-5194(1998)34:15<1441:MROBRI>2.0.ZU;2-P
Abstract
The measured temperature and supply voltage dependences of a bandgap r eference circuit first published by Gilbert and implemented in IBM's S iGe BiCMOS process agree well with model predictions. The plot of V-BG R against temperature exhibits less curvature than predicted elsewhere for SiGe BGRs.