ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF GAINN GAN MULTIQUANTUM-WELL LASER-DIODE/

Authors
KOBAYASHI T NAKAMURA F NAGANUMA K TOJYO T NAKAJIMA H ASATSUMA T KAWAI H IKEDA M
Citation
T. Kobayashi et al., ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF GAINN GAN MULTIQUANTUM-WELL LASER-DIODE/, Electronics Letters, 34(15), 1998, pp. 1494-1495
Citations number
3
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
15
Year of publication
1998
Pages
1494 - 1495
Database
ISI
SICI code
0013-5194(1998)34:15<1494:RCOOGG>2.0.ZU;2-P
Abstract
Continuous-wave operation at room temperature was demonstrated in a Ga InN/GaN multiquantum well (MQW) laser grown by metal organic chemical vapour deposition (MOCVD) using a horizontal reactor. The laser struct ure was grown a (0001) c-plane sapphire substrate. A 1 mm long cavity with a 4 mu m wide ridge stripe was formed by cleaving along the (11-2 0) plane of the GaInN/GaN epitaxial layers. Stimulated emission was ob served at a wavelength of 411 nm with a threshold current density of 1 1.7kA/cm(2).