APPLICATION OF SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS IN 5.8 AND 10GHZ LOW-NOISE AMPLIFIERS

The development of wireless services in the 5-10 GHz region demands lo w-cost radio Frequency (RF) monolithic microwave integrated circuits, with SiGe heterojunction bipolar transistors as a likely technology, c ombining the low cost of a mature silicon technology with excellent RF performance. These transistors are particularly attractive candidates for low-noise applications. The authors demonstrate 5.8 and 10 GHz lo w-noise amplifiers exhibiting a minimum noise figure of 1.6 and 3.3 dB , respectively, and a power gain above 12 dB.