MONOLITHIC 1.3-MU-M RESONANT-CAVITY LIGHT-EMITTING DIODE GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY

Authors
JALONEN M KONGAS J TOIVONEN M SAVOLAINEN P ORSILA S SALOKATVE A PESSA M
Citation
M. Jalonen et al., MONOLITHIC 1.3-MU-M RESONANT-CAVITY LIGHT-EMITTING DIODE GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY, Electronics Letters, 34(15), 1998, pp. 1519-1520
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
15
Year of publication
1998
Pages
1519 - 1520
Database
ISI
SICI code
0013-5194(1998)34:15<1519:M1RLDG>2.0.ZU;2-G
Abstract
A monolithic 1.3 mu m resonant cavity light emitting diode grown by so lid source molecular beam epitaxy is demonstrated. The diode has a 1 l ambda thick GaInAsP optical cavity active region surrounded by GaInAsP distributed Bragg reflectors. The device exhibits strong spontaneous emission with a narrow linewidth of 13 nm. The results also clearly de monstrate the accuracy of solid source molecular beam epitaxy for the growth of complex and thick GaInAsP-based device structures.