0.1-MU-M ALSB INAS HEMTS WITH INAS SUBCHANNEL

AlSb/InAs HEMTs with a 0.1 mu m gate length have been fabricated with a thin InAs subchannel separated from the InAs channel by 30 Angstrom of AlSb. As a result, these HEMTs exhibit improved charge control and a higher current-gain cutoff frequency. The devices have a microwave t ransconductance of 850 mS/mm and an f(T) of 180 GHz at V-DS = 0.6 V. A fter subtracting the gate bonding pad capacitance, an f(T) of 250 GHz was obtained.