THE ROLE OF MACRODEFECTS IN ELECTRONIC AND IONIC PROCESSES IN WIDE-BAND II-VI SEMICONDUCTORS

This paper discusses the electrical, photoelectric, and photoluminesce nce characteristics and the ESR spectra of CdS crystals with various d islocation densities (gamma = 10(2) - 10(5) cm(-2)). It is found that the presence of mobile donors and of dislocations with density gamma>1 0(3) - 10(4) cm(-2) has a number of specific effects: anistropy of the electrical-field-induced conductivity, athermal diffusion of donors u nder the action of ultrasound, distortion of the shape of the edge-lum inescence spectrum, and photostimulated degradation of the photosensit ivity and photoluminescence. The dependance of the type of macrodefect s and the optical strength of the crystals on the fabrication process is studied. (C) 1998 American Institute of Physics.