SELF-ORGANIZING NANOHETEROSTRUCTURES IN INGAASP SOLID-SOLUTIONS

This paper discusses the photoluminescence and x-ray microstructural p roperties of epitaxial layers of solid solutions of InGaAsP isoperiodi c with InP (100) and GaAs (100) substrates, obtained in the region of immiscibility and spinodal decay. It shows that there is good agreemen t of the experimental results with the theoretical model of spinodal d ecay. The boundaries of the region in which two solid phases of differ ent composition exist in epitaxial layers of solid solutions of InGaAs P isoperiodic with the InP and GaAs substrates are determined. A perio dic nanoheterostructure is obtained in an epitaxial layer of InGaAsP s olid solutions with a repetition period of 650 +/- 30 Angstrom in two mutually perpendicular directions. (C) 1998 American Institute of Phys ics.