IDENTIFYING THE PARAMETERS OF IMPURITY LEVELS IN HIGH-RESISTANCE SEMICONDUCTOR CRYSTALS BY MEANS OF THERMALLY STIMULATED CURRENTS WITH DOSED ILLUMINATION OF THE SAMPLES

A method is proposed for identifying the parameters of impurity levels in high-resistance (insulating) semiconductor crystals that makes it possible to use thermally stimulated currents with dosed illumination of the samples to simultaneously determine the depth of the impurity l evels in the band gap of the crystal (Delta E) and to establish from w hich of the allowed band's edge should the depth of the levels be meas ured. The widely used ordinary method of thermally stimulated currents does not allow this to be done. (C) 1998 American Institute of Physic s.