Ob. Tagiev et al., THE EFFECT OF A STRONG ELECTRIC-FIELD ON THE CONDUCTIVITY OF A MNGAINS4 EU SINGLE-CRYSTAL, Semiconductors (Woodbury, N.Y.), 32(6), 1998, pp. 629-630
This paper presents the results of a study of the effect of a strong e
lectric field on the electrical properties of MnGaInS4 : Eu single cry
stals. The compound was obtained by the Bridgman method and consists o
f plane-parallel layered plates. The following parameters are determin
ed on the basis of these studies : concentration of trap levels 10(13)
-10(14) cm(-3) and activation energy 0.70-0.50 eV. It is established t
hat the conductivity of MnGaInS4 : Eu increases in strong electric fie
lds mainly because the current-carrier concentration increases with el
ectric field. (C) 1998 American Institute of Physics. [S1063-7826(98)0
1406-9].