THE EFFECT OF A STRONG ELECTRIC-FIELD ON THE CONDUCTIVITY OF A MNGAINS4 EU SINGLE-CRYSTAL

Citation
Ob. Tagiev et al., THE EFFECT OF A STRONG ELECTRIC-FIELD ON THE CONDUCTIVITY OF A MNGAINS4 EU SINGLE-CRYSTAL, Semiconductors (Woodbury, N.Y.), 32(6), 1998, pp. 629-630
Citations number
8
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
10637826
Volume
32
Issue
6
Year of publication
1998
Pages
629 - 630
Database
ISI
SICI code
1063-7826(1998)32:6<629:TEOASE>2.0.ZU;2-A
Abstract
This paper presents the results of a study of the effect of a strong e lectric field on the electrical properties of MnGaInS4 : Eu single cry stals. The compound was obtained by the Bridgman method and consists o f plane-parallel layered plates. The following parameters are determin ed on the basis of these studies : concentration of trap levels 10(13) -10(14) cm(-3) and activation energy 0.70-0.50 eV. It is established t hat the conductivity of MnGaInS4 : Eu increases in strong electric fie lds mainly because the current-carrier concentration increases with el ectric field. (C) 1998 American Institute of Physics. [S1063-7826(98)0 1406-9].