ERBIUM IMPURITY ATOMS IN SILICON

Authors
MASTEROV VF NASREDINOV FS SEREGIN PP TERUKOV EI MEZDROGINA MM
Citation
Vf. Masterov et al., ERBIUM IMPURITY ATOMS IN SILICON, Semiconductors (Woodbury, N.Y.), 32(6), 1998, pp. 636-639
Citations number
9
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors (Woodbury, N.Y.) → ACNP
ISSN journal
10637826
Volume
32
Issue
6
Year of publication
1998
Pages
636 - 639
Database
ISI
SICI code
1063-7826(1998)32:6<636:EIAIS>2.0.ZU;2-E
Abstract
It is shown using Er-169(Tm-169) Mossbauer emission spectroscopy that the photoluminescent centers in crystalline erbium-doped silicon are [ Er-O] clusters and that the local symmetry of the Er3+ ions in these c lusters is similar to that in Er2O3. The photoluminescent centres in a morphous hydrogenated erbium-doped silicon are clusters, whose local s tructure also corresponds to erbium oxide. (C) 1998 American Institute of Physics.(()