OXYGEN PRECIPITATES AND THE FORMATION OF THERMAL DONORS IN SILICON

Authors
VABISHCHEVICH NV BRINKEVICH DI PROSOLOVICH VS
Citation
Nv. Vabishchevich et al., OXYGEN PRECIPITATES AND THE FORMATION OF THERMAL DONORS IN SILICON, Semiconductors (Woodbury, N.Y.), 32(6), 1998, pp. 640-641
Citations number
5
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors (Woodbury, N.Y.) → ACNP
ISSN journal
10637826
Volume
32
Issue
6
Year of publication
1998
Pages
640 - 641
Database
ISI
SICI code
1063-7826(1998)32:6<640:OPATFO>2.0.ZU;2-#
Abstract
It is established by infrared spectroscopy and Hall measurements that the oxygen precipitates formed during preliminary high-temperature tre atment suppress the generation of thermal donors in Si grown either by the Czochralski method or by applying a magnetic field to a melt. Pos sible mechanisms for the influence of precipitation on the formation o f thermal donors are proposed. (C) 1998 American Institute of Physics.