INDUCED PHOTOPLEOCHROISM OF P-GAALAS P-N-GAAS STRUCTURES/

The polarization photosensitivity appearing when linearly polarized ra diation impinges obliquely on the reception plane coated by the anodic oxide in anodic-oxide/p-Ga0.3Al0.7As/p-n-GaAs photoconverter structur es is investigated experimentally. It is established that the induced photopleochroism of the structures increases with increasing angle of incidence according to a quadratic law and is determined in the long-w avelength spectral region (h omega<1.5 eV) by dependence of the induce d photopleochroism coefficient in the 1.6 to 3-eV range is associated with bleaching, for which a drop in the induced photopleochroism (P-1 --> 0) can serve as a criterion. It is concluded that polarization spe ctroscopy can be employed for the diagnoses of bleaching in GaAlAs/GaA s photoconverter structures. (C) 1998 American Institute of Physics.