SURFACE MOBILITY AND DISTRIBUTION OF ELECTRONS IN THE ACCUMULATION LAYER OF GA2SE3 GAAS HETEROSTRUCTURES/

Authors
ANTYUSHIN VF VLASOV DA ARSENTEV IN
Citation
Vf. Antyushin et al., SURFACE MOBILITY AND DISTRIBUTION OF ELECTRONS IN THE ACCUMULATION LAYER OF GA2SE3 GAAS HETEROSTRUCTURES/, Semiconductors (Woodbury, N.Y.), 32(6), 1998, pp. 646-648
Citations number
13
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors (Woodbury, N.Y.) → ACNP
ISSN journal
10637826
Volume
32
Issue
6
Year of publication
1998
Pages
646 - 648
Database
ISI
SICI code
1063-7826(1998)32:6<646:SMADOE>2.0.ZU;2-U
Abstract
The dependence of the electron drift mobility in the undepleted conduc tion channels of Ga2Se3/GaAs heterostructures on the surface charge de nsity is measured. The presence of charge coupling in the accumulation layer sufficient for creating electrical (or microelectronic) devices is discovered. (C) 1998 American Institute of Physics.