ELECTRON-PHONON INTERACTION AND ELECTRON-MOBILITY IN QUANTUM-WELL TYPE-II PBTE PBS STRUCTURES/

Authors
BONDARENKO VV ZABUDSKII VV SIZOV FF
Citation
Vv. Bondarenko et al., ELECTRON-PHONON INTERACTION AND ELECTRON-MOBILITY IN QUANTUM-WELL TYPE-II PBTE PBS STRUCTURES/, Semiconductors (Woodbury, N.Y.), 32(6), 1998, pp. 665-667
Citations number
16
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors (Woodbury, N.Y.) → ACNP
ISSN journal
10637826
Volume
32
Issue
6
Year of publication
1998
Pages
665 - 667
Database
ISI
SICI code
1063-7826(1998)32:6<665:EIAEIQ>2.0.ZU;2-I
Abstract
Electron mobilities in PbTe layers were calculated, taking into accoun t electron scattering by longitudinal polar optical phonons, for low-d imensional structures - multiple PbTe/PbS quantum wells, which are typ e-II structures. Comparison with the electron mobilities obtained from Hall coefficient and magnetoresistance investigations in undoped mult iple PbTe/PbS quantum wells versus the magnetic field intensity showed good agreement between the computed and experimental results for thes e structures. (C) 1998 American Institute of Physics.