In this work, we have simulated the experimental charge pumping techni
que by the development and implementation of a macro model in the elec
trical simulator SMART SPICE on a personal computer. This macro model
takes into account all of the geometrical and electrical parameters of
the studied transistor and gives their mathematical expressions. It a
lso gives the different curves of the charge pumping current, which ca
n be obtained experimentally by this technique for different parameter
s, before or after different ageing stresses. The results obtained are
compared with recent experimental results. (C) 1998 Published by Else
vier Science Ltd. All rights reserved.