Msa. Abdelmottaleb et al., PHOTOELECTROCHEMISTRY OF N-SILICON SEMICONDUCTOR IN FLUORIDE MEDIA, Proceedings of the Indian Academy of Sciences. Chemical sciences, 110(3), 1998, pp. 185-191
The effect of adding [Ru(bpy)(3)](2+) complexes during photoelectroche
mical etching of n-silicon on the photocurrent generation is studied.
Remarkable enhancement of photocurrent is induced due to the presence
of the dye redox system. Redox stabilization of silicon via electron t
ransfer process based on remarkable interfacial interaction between re
ducing species and the photoelectrode is efficiently achieved. Transie
nt photoelectrochemical measurements during anodic dissolution of n-si
licon in the presence of the complex redox System resulted in inhibiti
on of photocurrent oscillations which was observed at high potentials
in the absence of dye redox system. Practically, all photogenerated ho
les reaching the silicon electrode surface will be efficiently reacted
with the coordination redox system resident at the electrode surface.
A mechanism of current oscillations, based on periodic buildup and de
cay (hole/electron recombination) of space charge within the superfici
al oxide layer is proposed.