SUPPRESSION OF GEOMETRIC COMPONENT OF CHARGE-PUMPING CURRENT IN THIN-FILM SILICON-ON-INSULATOR METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

A new reverse pulse method is proposed for precise measurement of char ge pumping current in silicon on insulator metaloxide-semiconductor fi eld-effect transistors (SOI MOSFETs), where the reverse pulse voltage is applied to the body only at the gate voltage rise time. The majorit y carries of the high resistive body region can be completely removed by applying the reverse pulse to the body. Therefore, the undesirable, geometry-dependent component which causes imprecise measurement of th e interface trap density on SOI MOSFETs is suppressed. This method als o suppresses the reduction of effective channel length which takes pla ce when using a DC reverse bias. It is demonstrated that the accurate measurements of the interface density on SOI MOSFETs are possible.