FABRICATION AND RAMAN ANALYSIS OF ZNSE QUANTUM DOTS IN GLASS MATRIX THIN-FILMS BY PULSED-LASER EVAPORATION

We have successfully fabricated ZnSe-microcrystal-doped silica-glass t hin films by pulsed laser evaporation from ZnSe powder embedded in sol -gel glass targets and demonstrated that the spatial cell-elation mode l call be used to analyze the LO Raman mode of ZnSe semiconductor dope d glass thin films. The obtained correlation lengths differ from the r eal sizes of the particulates observed by scanning electron microscopy which may bz due to the fact that the particulates art polycrystallin e, with different orientations separated by grain boundaries, and the correlation length just provides a measure of the separated average gr ain dimension. The photoluminescence spectrum indicates that the carri ers may tunnel through the grain walls in the polycrystalline particul ates. Low temperature annealing only causes aggregate of particulates without merging the grain boundaries.