C-60 RESIST MASK OF ELECTRON-BEAM LITHOGRAPHY FOR CHLORINE-BASED REACTIVE ION-BEAM ETCHING

We have examined a potential of a C-60 film as an electron-beam resist for a chlorine-based reactive ion beam etching mask. The sensitivity of C-60 as a negative-type electron beam resist was similar to 25 mC/c m(2) for monochlorobenzene. The maximum etching rate ratios of GaAs an d InP to C-60 were 20 and 5, respectively. In addition, we have succee ded in fabricating micropillars of <0.5 mu m in diameter in GaAs with this C-60 mask for the first time.