HIGH-VOLTAGE FAST RAMP PULSE GENERATION USING AVALANCHE TRANSISTOR

Citation
Jy. Liu et al., HIGH-VOLTAGE FAST RAMP PULSE GENERATION USING AVALANCHE TRANSISTOR, Review of scientific instruments, 69(8), 1998, pp. 3066-3067
Citations number
4
Categorie Soggetti
Physics, Applied","Instument & Instrumentation
ISSN journal
00346748
Volume
69
Issue
8
Year of publication
1998
Pages
3066 - 3067
Database
ISI
SICI code
0034-6748(1998)69:8<3066:HFRPGU>2.0.ZU;2-W
Abstract
The authors have developed an avalanche transistor based pulser for us e as a pockel cells driver and for gating a microchannel plate. The ou tput voltage ranges from 1-4 kV to 50 Ohm, with fall times of 200-300 ps. The repetition rate is less than 1 kHz. The tr-ig jitter is less t han 100 ps. Trig delay is about 8 ns. (C) 1998 American Institute of P hysics.