HIGH-TEMPERATURE OPERATION OF 650-NM WAVELENGTH ALGAINP SELF-PULSATING LASER-DIODES

Low-coherence self-pulsating laser diodes operating at a wavelength of 650 nm and at temperatures in excess of 70 degrees C are required for high density optical storage systems. We report on AlGaInP lasers ope rating at this wavelength which exhibit stable self-pulsation up to a temperature of 100 degrees C. The lasers are 50-mu m-wide oxide-isolat ed stripe devices in which the saturable absorption necessary for puls ation is provided by multiple-quantum wells placed within the p-doped cladding layer. The pulsation frequency of the devices increases linea rly with increasing drive current and is present up to 1.5 times lasin g threshold.