NARROW-BAND PHOTORECEIVER OEIC ON INP OPERATING AT 38 GHZ

We report on the successful monolithic integration of an InP-based pho toreceiver operating in the narrow band around 38 GHz at a wavelength of 1.55 mu m. The optoelectronic integrated circuit (OEIC) incorporate s two types of high-speed devices, a submicrometer metal-semiconductor -metal photodetector (MSM PD) made of InGaAs-InP and quarter-micromete r high-electron-mobility-transistors (HEMT's) based on a lattice-match ed InGaAs-InAIAs-InP layer stack. For this purpose a fabrication proce ss requiring only twelve main steps including a metal-organic chemical vapor deposition growth for the MSM PD layers and a MBE regrowth for the HEMT layers has been developed, At 38 GHz, a responsivity of 3.5 A /W for the OEIC is achieved.