M. Gosling et al., HUMAN SAPHENOUS-VEIN ENDOTHELIAL-CELLS EXPRESS A TETRODOTOXIN-RESISTANT, VOLTAGE-GATED SODIUM CURRENT, The Journal of biological chemistry, 273(33), 1998, pp. 21084-21090
Whole-cell patch-clamp electrophysiological investigation of endotheli
al cells cultured from human saphenous vein (HSVECs) has identified a
voltage-gated Na+ current with a mean peak magnitude of -595 +/- 49 pA
(n = 75). This current was inhibited by tetrodotoxin (TTX) in a conce
ntration-dependent manner, with an IC50 value of 4.7 mu M, suggesting
that it was of the TTX-resistant subtype, An antibody directed against
the highly conserved intracellular linker region between domains III
and IV of known Na+ channel alpha-subunits was able to retard current
inactivation when applied intracellularly. This antibody identified a
245-kDa protein from membrane lysates on Western blotting and positive
ly immunolabeled both cultured HSVECs and intact venous endothelium, H
SVECs were also shown by reverse transcription-polymerase chain reacti
on to contain transcripts of the hH1 sodium channel gene. The expressi
on of Na+ channels by HSVECs was shown using electrophysiology and cel
l-based enzyme-linked immunosorbent assay to be dependent on the conce
ntration and source of human serum. Together, these results suggest th
at TTX-resistant Na+ channels of the hill isoform are expressed in hum
an saphenous vein endothelium and that the presence of these channels
is controlled by a serum factor.