Cw. Chung, REACTIVE ION ETCHING OF PB(ZRXTI1-X)O-3 THIN-FILMS IN AN INDUCTIVELY-COUPLED PLASMA, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 1894-1900
Reactive ion etching of PbZrxTi1-xO3 (PZT) thin films was studied by u
sing Cl-2/C2F6/Ar gas chemistry in an inductively coupled plasma (ICP)
. PZT films were deposited on Pt/Ti/SiO2/Si substrates by the sol-gel
process. PZT films were etched by varying the etching parameters inclu
ding coil rf power, de-bias voltage to the substrate, and gas pressure
. Etching characteristics of PZT films were investigated in terms of e
tch rate, etch selectivity, etch profile and etching mechanism. Etch p
rofile along with etch anisotropy was observed as a function of etchin
g parameter by field emission scanning electron microscopy. For unders
tanding of the etching mechanism, x-ray photoelectron spectroscopy and
ICP analysis for film composition were utilized. Finally, the pattern
transfer of PZT films with fine geometry was successfully achieved at
the optimum etching condition. (C) 1998 American Vacuum Society.