Perovskite, ferroelectric and paraelectric, thin films exhibit outstan
ding dielectric properties, even at high frequencies (>1 GHz). This fe
ature makes films such as (Ba,Sr)TiO3 and Pb(Zr,Ti)O-3 ideally suited
for a wide range of capacitor applications, particularly decoupling ca
pacitors and tunable microwave capacitors; the latter application has
been fueled by the recent explosion in wireless communications. The su
ccessful implementation of these materials as high-frequency dielectri
cs requires a detailed understanding of both their processing and mate
rials properties.