ULTRAFAST ADIABATIC POPULATION TRANSFER IN P-DOPED SEMICONDUCTOR QUANTUM-WELLS

The light-induced adiabatic population transfer of holes from the heav y-hole (hh) to the light-hole (lh) band in p-doped semiconductor quant um wells is investigated theoretically. The exact analog to the popula tion-trapped state (PTS) used in atomic and molecular adiabatic popula tion transfer does not exist in a semiconductor due to the continuum o f transition energies and the dynamic light-induced shifts thereof. Ho wever, it is found that the population transfer only requires an appro ximate PTS condition to be fulfilled. As for a possible observation of the effect, the transient creation of a hh exciton resonance at the e xpense of the lh exciton is predicted.