PHOTOEMISSION-STUDY OF ULTRA-THIN VANADIUM FILMS ON CU(100)

Citation
P. Pervan et al., PHOTOEMISSION-STUDY OF ULTRA-THIN VANADIUM FILMS ON CU(100), Vacuum, 50(3-4), 1998, pp. 245-249
Citations number
34
Categorie Soggetti
Physics, Applied","Material Science
Journal title
VacuumACNP
ISSN journal
0042207X
Volume
50
Issue
3-4
Year of publication
1998
Pages
245 - 249
Database
ISI
SICI code
0042-207X(1998)50:3-4<245:POUVFO>2.0.ZU;2-X
Abstract
The electronic properties of ultra-thin vanadium films grown on the Cu (100) surface are studied by means of angular photoemission spectrosco py (ARUPS). Vanadium films with nominal film thickens of 4 ML appear t o have fully developed valence band characteristic for the bulk vanadi um. Influence of hydrogen on the valence band spectrum of vanadium is discussed. Annealing of the V/Cu(100) introduces a segregation of copp er on top of vanadium film. The copper films produced by the annealing at temperatures below 700 K appear to have different structure than t he films obtained after annealing at higher temperatures. The thicknes s of the copper overlayer is estimated to be 2-3 ML. (C) 1998 Elsevier Science Ltd. All rights reserved.