The electronic properties of ultra-thin vanadium films grown on the Cu
(100) surface are studied by means of angular photoemission spectrosco
py (ARUPS). Vanadium films with nominal film thickens of 4 ML appear t
o have fully developed valence band characteristic for the bulk vanadi
um. Influence of hydrogen on the valence band spectrum of vanadium is
discussed. Annealing of the V/Cu(100) introduces a segregation of copp
er on top of vanadium film. The copper films produced by the annealing
at temperatures below 700 K appear to have different structure than t
he films obtained after annealing at higher temperatures. The thicknes
s of the copper overlayer is estimated to be 2-3 ML. (C) 1998 Elsevier
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