ION IMPLANTATION-CAUSED DAMAGE DEPTH PROFILES IN SINGLE-CRYSTALLINE SILICON STUDIED BY SPECTROSCOPIC ELLIPSOMETRY AND RUTHERFORD BACKSCATTERING SPECTROMETRY

Damage created by ion implantation of Ar+ ions into single crystalline silicon is characterized using Spectroscopic Ellipsometry (SE) and Ru therford Backscattering Spectrometry(RBS). To create buried disorder, Ar+ ions with an energy of 100 keV were implanted into the samples. io n doses were varied from 5 x 10(13) atom/cm(2) to 6.75 x 10(14) atom/c m(2). Damage depth profiles have been investigated using RES combined with channeling, and SE. For the analysis of the SE data optical model s were used, which consist of a stack of layers. The result proves the applicability of spectroscopic ellipsometry for the characterization of ion-implantation-caused damage. As an independent cross-checking me thod, Rutherford Backscattering Spectrometry was used. The RES results basically supported the optical model of SE. (C) 1998 Elsevier Scienc e Ltd. All rights reserved.