MODIFIED C-T TECHNIQUE FOR DETERMINING THE GENERATION LIFETIME PROFILE IN MEV HE+ IMPLANTED

Depth profiling of carrier lifetime can be a very useful method for in vestigation of minority charge carrier lifetime modification by ion im plantation. A modified pulse C-t method has been developed for this pu rpose using the MOS structure fabricated on bulk Si prior to ion impla ntation. This technique enables the determination of lifetime distribu tion in the near surface region. Verification of the method was done o n the devices implanted with MeV He+ ions for different doses. The ext racted lifetime profiles as well as the advantages and limitations oft he method are also discussed. (C) 1998 Elsevier Science Ltd. All righ ts reserved.