SCHOTTKY-BARRIER HEIGHT DEPENDENCE ON THE SILICON INTERLAYER THICKNESS OF AU SI/N-GAAS CONTACTS - CHEMISTRY OF INTERFACE FORMATION STUDY/

This work reports on the X-ray photoemission spectroscopy (XPS) measur ements of the As-rich GaAs(001) surface properties developing due to t he different thicknesses of the undoped silicon overlayers. We analyze d the bond nature on the silicon-GaAs interface depending on the silic on thickness which was connected with observed variations in surface F ermi level positions. Further, the Au/Si/n-GaAs metal-semiconductor co ntacts were prepared on the studied structures. Measured changes in th e Schottky barrier height for silicon thicknesses till approximately I nm are interpreted through the approach of the Schottky barrier heigh t to Schottky limit due to decrease of the interface state densities o n the Si/GaAs interface. (C) 1998 Published by Elsevier Science Ltd. A ll rights reserved.