ANOMALOUS TEMPERATURE-DEPENDENCE OF SERIES RESISTANCE IN AG SI AND AL/SI SCHOTTKY JUNCTIONS/

Authors
HORVATH ZJ ADAM M PINTER I CVIKL B KOROSAK D MRDJEN T TUYEN VV MAKARO Z DUCSO C BARSONY I
Citation
Zj. Horvath et al., ANOMALOUS TEMPERATURE-DEPENDENCE OF SERIES RESISTANCE IN AG SI AND AL/SI SCHOTTKY JUNCTIONS/, Vacuum, 50(3-4), 1998, pp. 417-419
Citations number
7
Categorie Soggetti
Physics, Applied","Material Science
Journal title
Vacuum → ACNP
ISSN journal
0042207X
Volume
50
Issue
3-4
Year of publication
1998
Pages
417 - 419
Database
ISI
SICI code
0042-207X(1998)50:3-4<417:ATOSRI>2.0.ZU;2-M
Abstract
Recently high temperature dependence of series resistance was obtained in Ag/n-Si and Al/n-Si/p-Si Schottky junctions prepared by ionised cl uster beam deposition and by plasma immersion implantation, respective ly. In this work it is shown by experiments that this feature was due to the poor quality of backside ohmic contacts. (C) 1998 Elsevier Scie nce Ltd. All rights reserved.