In this work the effect of the back surface field (BSF) formation by h
igh temperature treatment of backside aluminisation was analysed in si
licon solar cells. Systematic I-V and spectral response (SR) character
isation shows an obviously superior performance of Al-diffused cells e
specially in the red near infrared region compared to those with conve
ntional boron BSF. These findings along with the result of the perform
ed XTEM, NRA (Resonance Nuclear Reaction Analysis), SIMS, and ECV (Ele
ctrochemical CV) analyses on the backside layer structure lead to the
conclusion that the main contribution to the improvement, relative to
the conventional reference sample, is the minority carrier lifetime en
hancement by gettering effect in the Al-diffusion tail and the improve
d light trapping by backside roughening. (C) 1998 Elsevier Science Ltd
. All rights reserved.