ION-IMPLANTATION INDUCED BURIED DISORDER STUDIED BY RUTHERFORD BACKSCATTERING SPECTROMETRY AND SPECTROSCOPIC ELLIPSOMETRY

In this study, the damage created by ion implantation of N-2(+) ions i nto single crystalline [100] silicon is characterized using Rutherford Backscattering Spectrometry (RBS) and Spectroscopic Ellipsometry (SE) . Samples were implanted at room temperature with ion energy of 400 ke V to create buried disorder RES and channeling techniques with 1.5 MeV He+ ions were used in the experiments. For the analysis of SE data we applied the method of assuming appropriate optical model and fitting the model parameters (thickness of surface oxide and damaged silicon l ayers and the volume fraction of amorphous silicon component in the da maged layers). The buried disorder was studied by evaluating the inter ference oscillations of the low photon energy range of the spectra. Th e optical model was independently checked by RES experiments. Calculat ion using proposed optical model describes very well experimental SE d ata and predicts reasonably well the extent, intensity and depth of bu ried disorder as determined by RES. (C) 1998 Elsevier Science Ltd. All rights reserved.