GAASSB GAAS QUANTUM-WELL GROWTH BY MOCVD HYDRIDE EPITAXY WITH LASER SPUTTERING OF ANTIMONY/

Authors
ALESHKIN VY AKHLESTINA SA ZVONKOV BN ZVONKOV NB MALKINA IG USKOVA EA
Citation
Vy. Aleshkin et al., GAASSB GAAS QUANTUM-WELL GROWTH BY MOCVD HYDRIDE EPITAXY WITH LASER SPUTTERING OF ANTIMONY/, JETP letters, 68(1), 1998, pp. 91-96
Citations number
6
Categorie Soggetti
Physics
Journal title
JETP letters → ACNP
ISSN journal
00213640
Volume
68
Issue
1
Year of publication
1998
Pages
91 - 96
Database
ISI
SICI code
0021-3640(1998)68:1<91:GGQGBM>2.0.ZU;2-4
Abstract
A new method of obtaining quantum-size GaAs1-xSbx (x less than or equa l to 0.45) layers is proposed. The method consists in laser vaporizati on of solid metallic antimony near the substrate directly in the react or. The antimony concentration is set by the antimony sputtering time with the arsine flux shut off. The polarization of the photoluminescen ce of the obtained layers indicates the formation of quantum wires. Th e heterostructures obtained are used to fabricate laser diodes. (C) 19 98 American Institute of Physics.