THEORETICAL-STUDY OF MOLECULAR CONTAMINATION ON SILICON-WAFERS - INTERACTIONS BETWEEN MOLECULAR CONTAMINANTS AND THE SILICON SURFACE

Authors
Citation
Sb. Zhu, THEORETICAL-STUDY OF MOLECULAR CONTAMINATION ON SILICON-WAFERS - INTERACTIONS BETWEEN MOLECULAR CONTAMINANTS AND THE SILICON SURFACE, Journal of the IEST, 41(4), 1998, pp. 30-35
Citations number
11
Categorie Soggetti
Environmental Sciences","Instument & Instrumentation","Engineering, Environmental
Journal title
ISSN journal
10984321
Volume
41
Issue
4
Year of publication
1998
Pages
30 - 35
Database
ISI
SICI code
1098-4321(1998)41:4<30:TOMCOS>2.0.ZU;2-S
Abstract
Molecular contamination on silicon wafers is mainly determined by the gas phase concentrations of the contaminants, the adsorption energy of the molecules on the surface, and their removal rate. In this paper, a potential energy function is developed to describe interactions betw een adsorbed molecules and solid surfaces. ignoring possible chemical reactions at the interface, the development is based on a combination of the Pauli repulsion, the dispersion attraction, and the Coulomb int eraction between real and image charges. This potential function will be used to predict adsorption energies of various organic/inorganic mo lecules, including oxygen, halogens, aliphatic hydrocarbons, acids, an d inorganic carbon-containing compounds on silicon wafer surfaces.