OPTICALLY DETECTED MAGNETIC-RESONANCE IN ZINC-DOPED INDIUM-PHOSPHIDE UNDER UNIAXIAL-STRESS

Optically detected magnetic resonance (ODMR) of Zn-doped InP under uni axial stress reveals the spectrum of the Zn acceptors. The zero-stress spectrum consists of a strong ODMR from native P(In) antisites. Uniax ial stress was applied in the [110BAR] direction perpendicular to the magnetic field. With the magnetic field in the [110BAR], a new resonan ce appears for a stress of 160 MPa, which sharpens and shifts as the s tress is increased to 400 MPa. The anisotropy of the signal was measur ed by performing the experiment with the field in the [001] direction. An analysis in terms of a Hamiltonian for a spin-3/2 acceptor gives g 1 = 0.869(3) and g2 = 0.031(2) at 400 MPa. These values are compared t o those for Zn in other III-V semiconductors and to a measurement of t he Luttinger parameter for InP. This observation confirms the assignme nt of the 0.80-eV emission in InP:Zn to P(IN)-Zn pairs. When this resu lt is combined with the published result from excitation spectroscopy, the P(In)+/P(In)2+ energy level is (1.1+/-0.1) eV above the valence b and.