INVERSE PARABOLIC QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY USINGDIGITAL AND ANALOG TECHNIQUES

Authors
CHEN WQ WANG SM ANDERSSON TG THORDSON J
Citation
Wq. Chen et al., INVERSE PARABOLIC QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY USINGDIGITAL AND ANALOG TECHNIQUES, Physical review. B, Condensed matter, 48(19), 1993, pp. 14264-14268
Citations number
25
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
48
Issue
19
Year of publication
1993
Pages
14264 - 14268
Database
ISI
SICI code
0163-1829(1993)48:19<14264:IPQGBM>2.0.ZU;2-X
Abstract
An Al0.36Ga0.64As/AlxGa1-xAs inverse parabolic quantum-well structure was grown by molecular-beam epitaxy using both digital and analog comp ositional grading techniques. Photoluminescence and photocurrent measu rements showed distinct exciton peaks for both types of wells. A large Stark shift was found for the digital well, in agreement with the cal culations. An observed deviation for the analog well was ascribed to f luctuation in quantum-well parameters. Finally, advantages and disadva ntages of the two growth techniques are discussed.