MEASURING THE MECHANICAL RESONANCE OF A GAAS ALGAAS CANTILEVER USING A STRAIN-SENSING FIELD-EFFECT TRANSISTOR/

Authors
BECK RG ERIKSSON MA WESTERVELT RM MARANOWSKI KD GOSSARD AC
Citation
Rg. Beck et al., MEASURING THE MECHANICAL RESONANCE OF A GAAS ALGAAS CANTILEVER USING A STRAIN-SENSING FIELD-EFFECT TRANSISTOR/, Semiconductor science and technology, 13(8A), 1998, pp. 83-85
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
13
Issue
8A
Year of publication
1998
Supplement
S
Pages
83 - 85
Database
ISI
SICI code
0268-1242(1998)13:8A<83:MTMROA>2.0.ZU;2-H
Abstract
We have fabricated a cantilever with dimensions 0.5 mu m x 11.4 mu m x 65 mu m from a GaAs/Al0.3Ga0.7 As heterostructure containing a two-di mensional electron gas. A strain-sensing field-effect transistor (FET) integrated into the cantilever base acts as a displacement sensor via the piezoelectric effect. The FET was used to measure the cantilever mechanical quality factor Q = 360 and resonance frequency f(res) = 88. 2 kHz which is close to f(res) = 91 kHz calculated from geometry. FETs can be integrated into GaAs/AlGaAs microelectromechanical systems as force and displacement sensors.