STABILITY AND BAND OFFSETS OF ALN GAN HETEROSTRUCTURES - IMPACT ON DEVICE PERFORMANCE/

Authors
MAJEWSKI JA ZANDLER G VOGL P
Citation
Ja. Majewski et al., STABILITY AND BAND OFFSETS OF ALN GAN HETEROSTRUCTURES - IMPACT ON DEVICE PERFORMANCE/, Semiconductor science and technology, 13(8A), 1998, pp. 90-92
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
13
Issue
8A
Year of publication
1998
Supplement
S
Pages
90 - 92
Database
ISI
SICI code
0268-1242(1998)13:8A<90:SABOOA>2.0.ZU;2-E
Abstract
We have performed first-principles local density calculations of sever al interfaces between GaN and AlN and studied their formation enthalpy and band offsets and the charge pileup at polar interfaces. Monte Car lo studies of the electrical characteristics of submicron HFET structu res reveal that the pyro- and piezoelectric moments of the nitrides ar e a key property for designing and optimizing future devices.