INTERFACE ROUGHNESS AND POLAR OPTICAL PHONON-SCATTERING IN IN0.53GA0.47AS ALAS/INAS RTDS/

Authors
LAKE R KLIMECK G BLANKS D
Citation
R. Lake et al., INTERFACE ROUGHNESS AND POLAR OPTICAL PHONON-SCATTERING IN IN0.53GA0.47AS ALAS/INAS RTDS/, Semiconductor science and technology, 13(8A), 1998, pp. 163-164
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
13
Issue
8A
Year of publication
1998
Supplement
S
Pages
163 - 164
Database
ISI
SICI code
0268-1242(1998)13:8A<163:IRAPOP>2.0.ZU;2-V
Abstract
The contributions of interface roughness scattering and polar optical phonon scattering to the valley current of In0.53Ga0.47As/AlAs/InAs re sonant tunnelling diodes (RTDs) are theoretically found to be comparab le. An In0.53Ga0.47As/AlAs/InAS RTD design is suggested to experimenta lly observe the phonon peak which has never been observed in this mate rial system. Such a device will provide a calibration point for the th eoretical calculations.