CELLULAR-AUTOMATA SIMULATION OF NANOMETER-SCALE MOSFETS

Authors
SARANITI M ZANDLER G FORMICONE G WIGGER S GOODNICK S
Citation
M. Saraniti et al., CELLULAR-AUTOMATA SIMULATION OF NANOMETER-SCALE MOSFETS, Semiconductor science and technology, 13(8A), 1998, pp. 177-179
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
13
Issue
8A
Year of publication
1998
Supplement
S
Pages
177 - 179
Database
ISI
SICI code
0268-1242(1998)13:8A<177:CSONM>2.0.ZU;2-F
Abstract
We present systematic theoretical cellular automats studies of vertica lly grown, nanometre-scale, MOSFETs. The predicted drain characteristi cs and output conductance are in excellent agreement with experimental data from fabricated devices. The inclusion of an inhomogeneous p-dop ing profiles along the channel is investigated, which is shown to impr ove current saturation and therefore allows the reduction of the devic e dimensions.