ELECTRON-CYCLOTRON-RESONANCE (ECR) PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SILICON DIOXIDE ON STRAINED-SIGE FILMS USING TETRAETHYLORTHOSILICATE

Authors
BERA LK RAY SK BANERJEE HD MAITI CK
Citation
Lk. Bera et al., ELECTRON-CYCLOTRON-RESONANCE (ECR) PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SILICON DIOXIDE ON STRAINED-SIGE FILMS USING TETRAETHYLORTHOSILICATE, Bulletin of Materials Science, 21(4), 1998, pp. 283-286
Citations number
9
Categorie Soggetti
Material Science
Journal title
Bulletin of Materials Science → ACNP
ISSN journal
02504707
Volume
21
Issue
4
Year of publication
1998
Pages
283 - 286
Database
ISI
SICI code
0250-4707(1998)21:4<283:E(PC>2.0.ZU;2-3
Abstract
Silicon dioxide films on strained Si1-xGex have been deposited by elec tron cyclotron resonance (ECR) plasma-enhanced chemical vapour deposit ion technique using tetraethylorthosilicate (TEOS) at room temperature . The deposition rate as a function of time and substrate temperature has been studied. MOS capacitors fabricated using deposited oxides hav e been used to characterize the electrical properties of silicon dioxi de films. Deposited oxide film shows its suitability for microelectron ic applications.